bcp 51m ... bcp 53m 1 oct-20-1999 pnp silicon af transistor ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcp 54m...bcp 56m(npn) vpw05980 1 2 3 5 4 type marking pin configuration package bcp 51m bcp 52m bcp 53m aas aes ahs 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 4=n.c. 4=n.c. 4=n.c. 5 = c 5 = c 5 = c sct-595 sct-595 sct-595 maximum ratings parameter symbol bcp 53m unit bcp 52m bcp 51m v 45 v ceo 60 80 collector-emitter voltage v cbo 45 100 collector-base voltage 60 5 v ebo 5 emitter-base voltage 5 a dc collector current i c 1 peak collector current i cm 1.5 100 ma base current i b peak base current 200 i bm p tot 1.7 w total power dissipation , t s 77 c c 150 junction temperature t j storage temperature t st g -65 ... 150 thermal resistance r thja 98 junction ambient 1) k/w junction - soldering point r thjs 43 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcp 51m ... bcp 53m 2 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. symbol values unit parameter min. max. typ. dc characteristics - - - - - - v 45 60 80 v (br)ceo bcp 51m bcp 52m bcp 53m collector-emitter breakdown voltage i c = 10 ma, i b = 0 45 60 100 - - - bcp 51m bcp 52m bcp 53m - - - v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 v (br)ebo 5 emitter-base breakdown voltage i e = 10 a, i c = 0 - - na 100 collector cutoff current v cb = 30 v, i e = 0 - i cbo - a - 20 - collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo - - 25 - h fe dc current gain 1) i c = 5 ma, v ce = 2 v 250 - h fe - 40 dc current gain 1) i c = 150 ma, v ce = 2 v - - - h fe 25 dc current gain 1) i c = 500 ma, v ce = 2 v 0.5 - v cesat collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma - v 1 base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - ac characteristics f t - 100 - mhz transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz 1) pulse test: t 300 s, d = 2%
bcp 51m ... bcp 53m 3 oct-20-1999 dc current gain h fe = f ( i c ) v ce = 2v 10 ehp00261 bcp 51...53 04 10 ma 0 10 3 10 5 5 10 1 10 2 10 1 c fe h 3 10 2 10 c 100 5 25 c -50 c total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 200 400 600 800 1000 1200 1400 1600 mw 2000 p tot t s t a permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t s -1 10 0 10 1 10 2 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
bcp 51m ... bcp 53m 4 oct-20-1999 collector cutoff current i cbo = f ( t a ) v cb = 30v 0 10 ehp00262 bcp 51...53 a t 150 -1 4 10 cbo na 50 100 0 10 1 10 3 10 c 10 2 max typ transition frequency f t = f ( i c ) v ce = 10 v 10 ehp00260 bcp 51...53 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 ehp00263 bcp 51...53 besat v 0 4 10 c ma 0.2 1 10 2 10 3 10 0.4 0.6 0.8 1.2 v c 100 25 c -50 c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00264 bcp 51...53 cesat v 0.4 v 0.8 0 10 1 10 2 4 10 5 5 c ma 5 3 10 0.2 0.6 c 100 25 c c -50
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